Micromechanical electrometry of single-electron transistor island charge
نویسندگان
چکیده
منابع مشابه
Micromechanical electrometry of single - electron transistor island charge
We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons.
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N. M. Chtchelkatchev,1,2,3 W. Belzig,1 and C. Bruder1 1Departement Physik und Astronomie, Universität Basel, Klingelbergstr. 82, 4056 Basel, Switzerland 2L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, 117940 Moscow, Russia 3Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk 142092, Moscow Region, Russia (Received 9 August 2004; published 11 N...
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ژورنال
عنوان ژورنال: Physica B: Condensed Matter
سال: 2002
ISSN: 0921-4526
DOI: 10.1016/s0921-4526(02)00529-x